Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(H,Q,T,V)30N60P(S)
Standard Package	30
Manufacturer	IXYS
Series	PolarHV™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	5050pF @ 25V
FET Feature	-
Power Dissipation (Max)	540W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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IXTH30N60P

Part NumberIXTH30N60P