Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRC04DP-T1-GE3

SIRC04DP-T1-GE3

SIRC04DP-T1-GE3

Part NumberSIRC04DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A POWERPAKSO-8

DatasheetSIRC04DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRC04DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRC04DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRC04DP-T1-GE3.
We are offering SIRC04DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRC04DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC04DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2850pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRC04DP-T1-GE3 - Related Products

	IPW65R065C7XKSA1	Infineon Technologies, N-Channel 650V 33A (Tc) 171W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7	View
	IRFB4710PBF	Infineon Technologies, N-Channel 100V 75A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPB015N04NGATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	PMCM440VNEZ	Nexperia USA Inc., N-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78),	View
	SI2102-TP	Micro Commercial Co, N-Channel 20V 2.1A 200mW Surface Mount SOT-323,	View
	AOI1R4A70	Alpha & Omega Semiconductor Inc., N-Channel 700V 3.8A (Tc) 48W (Tc) Through Hole TO-251A, aMOS™	View
	SIHP28N65EF-GE3	Vishay Siliconix, N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	SIRA72DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	TK31V60X,LQ	Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV-H	View
	DMN3033LSN-7	Diodes Incorporated, N-Channel 30V 6A (Ta) 1.4W (Ta) Surface Mount SC-59-3,	View
	FDMS8560S	ON Semiconductor, N-Channel 25V 30A (Ta), 70A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	PMN120ENEX	Nexperia USA Inc., N-Channel 60V 3.1A (Ta) 1.4W (Ta), 6.25W (Tc) Surface Mount 6-TSOP,	View

SIRC04DP-T1-GE3 - Tags

SIRC04DP-T1-GE3 SIRC04DP-T1-GE3 PDF SIRC04DP-T1-GE3 datasheet SIRC04DP-T1-GE3 specification SIRC04DP-T1-GE3 image SIRC04DP-T1-GE3 India Renesas Electronics India SIRC04DP-T1-GE3 buy SIRC04DP-T1-GE3 SIRC04DP-T1-GE3 price SIRC04DP-T1-GE3 distributor SIRC04DP-T1-GE3 supplier SIRC04DP-T1-GE3 wholesales