IXTH02N250
IXTH02N250
Part Number IXTH02N250
Manufacturer IXYS
Description MOSFET N-CH 2500V 0.2A TO247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 2500V 200mA (Tc) 83W (Tc) Through Hole TO-247 (IXTH)
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IXTH02N250 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXTx02N250(S)
Standard Package 30
Manufacturer IXYS
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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