IRFSL11N50APBF
IRFSL11N50APBF
Part Number IRFSL11N50APBF Description MOSFET N-CH 500V 11A TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3
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IRFSL11N50APBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFSL11N50A Standard Package 1000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 550mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1426pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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