IXTF1R4N450


IXTF1R4N450

Part NumberIXTF1R4N450

Manufacturer

Description

Datasheet

Package / Casei4-Pac™-5 (3 Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTF1R4N450 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package25
ManufacturerIXYS
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)4500V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS i4-PAC™
Package / Casei4-Pac™-5 (3 Leads)

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IXTF1R4N450 - Tags

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