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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(H,T)26N100X(HV) Datasheet
Standard Package 30
Manufacturer IXYS
Series HiPerFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 1V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXFT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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FDC8886
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STF13N95K3
STMicroelectronics, N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH3™
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CSD15380F3T
Texas Instruments, N-Channel 20V 500mA (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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FDPF39N20
ON Semiconductor, N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™
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