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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(H,T)26N100X(HV) Datasheet
Standard Package 30
Manufacturer IXYS
Series HiPerFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 1V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXFT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Infineon Technologies, N-Channel 150V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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FDD2582
ON Semiconductor, N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA, PowerTrench®
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IRF7488TRPBF
Infineon Technologies, N-Channel 80V 6.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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SSM6K202FE,LF
Toshiba Semiconductor and Storage, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6),
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SI7686DP-T1-GE3
Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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DMN3030LSS-13
Diodes Incorporated, N-Channel 30V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOP,
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BSC031N06NS3GATMA1
Infineon Technologies, N-Channel 60V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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Infineon Technologies, N-Channel 700V 4.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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SI8802DB-T2-E1
Vishay Siliconix, N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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BSC350N20NSFDATMA1
Infineon Technologies, N-Channel 200V 35A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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FDD6630A
ON Semiconductor, N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252, PowerTrench®
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