IPD60N10S4L12ATMA1

Part NumberIPD60N10S4L12ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60N10S4L-12
Standard Package	1
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3170pF @ 25V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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