IPD60N10S4L12ATMA1


IPD60N10S4L12ATMA1

Part NumberIPD60N10S4L12ATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPD60N10S4L12ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, HEXFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3170pF @ 25V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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IPD60N10S4L12ATMA1 - Tags

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