IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
Part Number IPD60N10S4L12ATMA1
Description MOSFET N-CH TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
To learn about the specification of IPD60N10S4L12ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60N10S4L12ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60N10S4L12ATMA1.
We are offering IPD60N10S4L12ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD60N10S4L12ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD60N10S4L-12
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60N10S4L12ATMA1 - Related ProductsMore >>
STD11N65M2
STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ II Plus
View
DMNH10H028SPSQ-13
Diodes Incorporated, N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8,
View
STP3N80K5
STMicroelectronics, N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole TO-220, SuperMESH5™
View
SSM3K361R,LF
Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
View
AUIRFSL6535
Infineon Technologies, N-Channel 300V 19A (Tc) 210W (Tc) Through Hole PG-TO262-3-901, Automotive, AEC-Q101, HEXFET®
View
FQP6N40C
ON Semiconductor, N-Channel 400V 6A (Tc) 73W (Tc) Through Hole TO-220-3, QFET®
View
CPH3459-TL-W
ON Semiconductor, N-Channel 200V 500mA (Ta) 1W (Ta) Surface Mount 3-CPH,
View
TSM70N380CI C0G
Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Through Hole ITO-220AB,
View
2N7002BKW,115
Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™
View
AON2260
Alpha & Omega Semiconductor Inc., N-Channel 60V 6A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),
View
IRLL014NTRPBF
Infineon Technologies, N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
IPI045N10N3GXKSA1
Infineon Technologies, N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3, OptiMOS™
View
IPD60N10S4L12ATMA1 - Tags