IXFN50N80Q2
IXFN50N80Q2
Part Number IXFN50N80Q2 Manufacturer IXYS Description MOSFET N-CH 800V 50A SOT-227B Package / Case SOT-227-4, miniBLOCUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 50A (Tc) 1135W (Tc) Chassis Mount SOT-227B
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IXFN50N80Q2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFN50N80Q2 Standard Package 10 Manufacturer IXYS Series HiPerFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V FET Feature - Power Dissipation (Max) 1135W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
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