Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFN50N80Q2

IXFN50N80Q2

IXFN50N80Q2

Part NumberIXFN50N80Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 800V 50A SOT-227B

DatasheetIXFN50N80Q2

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 50A (Tc) 1135W (Tc) Chassis Mount SOT-227B

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IXFN50N80Q2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFN50N80Q2
Standard Package	10
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 25V
FET Feature	-
Power Dissipation (Max)	1135W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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IXFN50N80Q2 - Tags

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