Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFH80N65X2

IXFH80N65X2

IXFH80N65X2

Part NumberIXFH80N65X2

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 80A TO-247

DatasheetIXFx80N65X2 Preliminary

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247

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IXFH80N65X2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx80N65X2 Preliminary
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	143nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8245pF @ 25V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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