IXFH50N20


IXFH50N20

Part NumberIXFH50N20

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXFH50N20 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerIXYS
SeriesHiPerFET™
PackagingTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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IXFH50N20 - Tags

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