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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR7807ZPbF, IRLU7807ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN4R8-100BSEJ
Nexperia USA Inc., N-Channel 100V 120A (Tj) 405W (Tc) Surface Mount D2PAK,
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DMG1012UW-7
Diodes Incorporated, N-Channel 20V 1A (Ta) 290mW (Ta) Surface Mount SOT-323,
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PSMN041-80YLX
Nexperia USA Inc., N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8,
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TK72A12N1,S4X
Toshiba Semiconductor and Storage, N-Channel 120V 72A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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IXFX80N50Q3
IXYS, N-Channel 500V 80A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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STW65N65DM2AG
STMicroelectronics, N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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R6007JNXC7G
Rohm Semiconductor, N-Channel 600V 7A (Tc) 46W (Tc) Through Hole TO-220FM,
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IPB180N10S402ATMA1
Infineon Technologies, N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3, Automotive, AEC-Q101, OptiMOS™
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FQPF8N80CYDTU
ON Semiconductor, N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming), QFET®
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IXFA56N30X3
IXYS, N-Channel 300V 56A (Tc) 320W (Tc) Surface Mount TO-263AA, HiPerFET™
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RF4E070GNTR
Rohm Semiconductor, N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount HUML2020L8,
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AOD1R4A70
Alpha & Omega Semiconductor Inc., N-Channel 700V 3.8A (Tc) 48W (Tc) Surface Mount TO-252 (DPAK), aMOS™
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