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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR7807ZPbF, IRLU7807ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K44FS,LF
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SSM,
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SIR418DP-T1-GE3
Vishay Siliconix, N-Channel 40V 40A (Tc) 39W (Tc) Surface Mount PowerPAK® SO-8,
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SIB406EDK-T1-GE3
Vishay Siliconix, N-Channel 20V 6A (Tc) 1.95W (Ta), 10W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®
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FDPF12N50FT
ON Semiconductor, N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO-220F, UniFET™
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RCX220N25
Rohm Semiconductor, N-Channel 250V 22A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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FCPF11N60NT
ON Semiconductor, N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F, SuperMOS™
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BSP716NH6327XTSA1
Infineon Technologies, N-Channel 75V 2.3A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™
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SQS420EN-T1_GE3
Vishay Siliconix, N-Channel 20V 8A (Tc) 18W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IPB038N12N3GATMA1
Infineon Technologies, N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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RQ3G100GNTB
Rohm Semiconductor, N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),
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DMN2005UPS-13
Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8,
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STD10NF10T4
STMicroelectronics, N-Channel 100V 13A (Tc) 50W (Tc) Surface Mount DPAK, STripFET™ II
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