IRLHS6342TRPBF

Part NumberIRLHS6342TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLHS6342PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1019pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-PQFN (2x2)
Package / Case	6-PowerVDFN

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