IRLHM630TRPBF


IRLHM630TRPBF

Part NumberIRLHM630TRPBF

Manufacturer

Description

Datasheet

Package / Case8-VQFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRLHM630TRPBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3170pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-VQFN Exposed Pad

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IRLHM630TRPBF - Tags

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