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IRLB8314PBF

IRLB8314PBF

Part NumberIRLB8314PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 184A TO220

DatasheetIRLB8314PbF

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 130A (Tc) 125W (Tc) Through Hole TO-220-3

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IRLB8314PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLB8314PbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id	2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5050pF @ 15V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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