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IRL100HS121

IRL100HS121

Part NumberIRL100HS121

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 6PQFN

DatasheetIRL100HS121

Package / Case6-VDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)

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IRL100HS121 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRL100HS121
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id	2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 50V
FET Feature	-
Power Dissipation (Max)	11.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-PQFN (2x2)
Package / Case	6-VDFN Exposed Pad

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IRL100HS121 - Tags

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