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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK963R2-40B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 93.4nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 10502pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 40V 75A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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Comchip Technology, N-Channel 40V 70A (Tc) 2W (Ta), 72.3W (Tc) Surface Mount DFN5x6 (PR-PAK),
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IXYS, N-Channel 250V 44A (Tc) 104W (Tc) Through Hole ISO TO-247-3, HiPerFET™
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