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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB52N15DPbF, IRFS(L)52N15DPbF
Standard Package 800
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB015N08N5ATMA1
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ON Semiconductor, N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3, QFET®
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