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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFS4227PbF, IRFSL4227PbF
Standard Package 800
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFK210N30X3
IXYS, N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™
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IXTL2N450
IXYS, N-Channel 4500V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™,
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FDD86102
ON Semiconductor, N-Channel 100V 8A (Ta), 36A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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DMN2004K-7
Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
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BSC022N04LSATMA1
Infineon Technologies, N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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BUK9Y25-60E,115
Nexperia USA Inc., N-Channel 60V 34A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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SSM3H137TU,LF
Toshiba Semiconductor and Storage, N-Channel 34V 2A (Ta) 800mW (Ta) Surface Mount UFM, U-MOSIV
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TK380P65Y,RQ
Toshiba Semiconductor and Storage, N-Channel 650V 9.7A (Tc) 80W (Tc) Surface Mount DPAK, DTMOSV
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STD10NM60ND
STMicroelectronics, N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK, FDmesh™ II
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IPW90R500C3FKSA1
Infineon Technologies, N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3, CoolMOS™
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IPN80R2K0P7ATMA1
Infineon Technologies, N-Channel 800V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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MCQ12N06-TP
Micro Commercial Co, N-Channel 60V 12A 3.1W Surface Mount 8-SOP,
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