Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R1K4CEATMA1

IPD80R1K4CEATMA1

IPD80R1K4CEATMA1

Part NumberIPD80R1K4CEATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 3.9A TO252-3

DatasheetIPx80R1K4CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R1K4CEATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R1K4CEATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R1K4CEATMA1.
We are offering IPD80R1K4CEATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R1K4CEATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx80R1K4CE
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id	3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 100V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R1K4CEATMA1 - Related Products

	ZVN0545GTA	Diodes Incorporated, N-Channel 450V 140mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SSM6K403TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIII	View
	STP45NF06	STMicroelectronics, N-Channel 60V 38A (Tc) 80W (Tc) Through Hole TO-220AB, STripFET™ II	View
	AON7520	Alpha & Omega Semiconductor Inc., N-Channel 30V 48A (Ta), 50A (Tc) 6.2W (Ta), 83.3W (Tc) Surface Mount 8-DFN-EP (3.3x3.3), AlphaMOS	View
	FDP100N10	ON Semiconductor, N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3, PowerTrench®	View
	CSD17313Q2T	Texas Instruments, N-Channel 30V 5A (Ta) 2.4W (Ta), 17W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	SI7326DN-T1-E3	Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STB130N6F7	STMicroelectronics, N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D2PAK, STripFET™ F7	View
	IRFU3410PBF	Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	PMCM4401VNEAZ	Nexperia USA Inc., N-Channel 12V 4.7A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (2x2),	View
	R5011ANX	Rohm Semiconductor, N-Channel 500V 11A (Ta) 50W (Tc) Through Hole TO-220FM,	View
	R6004JNJGTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS (D2PAK),	View

IPD80R1K4CEATMA1 - Tags

IPD80R1K4CEATMA1 IPD80R1K4CEATMA1 PDF IPD80R1K4CEATMA1 datasheet IPD80R1K4CEATMA1 specification IPD80R1K4CEATMA1 image IPD80R1K4CEATMA1 India Renesas Electronics India IPD80R1K4CEATMA1 buy IPD80R1K4CEATMA1 IPD80R1K4CEATMA1 price IPD80R1K4CEATMA1 distributor IPD80R1K4CEATMA1 supplier IPD80R1K4CEATMA1 wholesales