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IPD80R1K4CEATMA1

IPD80R1K4CEATMA1

Part NumberIPD80R1K4CEATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 3.9A TO252-3

DatasheetIPx80R1K4CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3

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IPD80R1K4CEATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx80R1K4CE
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id	3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 100V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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