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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_9024
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSS192,115
Nexperia USA Inc., P-Channel 240V 200mA (Ta) 560mW (Ta), 12.5W (Tc) Surface Mount SOT-89,
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DMP21D6UFD-7
Diodes Incorporated, P-Channel 20V 600mA (Ta) 400mW Surface Mount X1-DFN1212-3,
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TP5322K1-G
Microchip Technology, P-Channel 220V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),
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PMZB350UPE,315
Nexperia USA Inc., P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3,
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SQ3419AEEV-T1_GE3
Vishay Siliconix, P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®
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SI4825DDY-T1-GE3
Vishay Siliconix, P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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BSS209PWH6327XTSA1
Infineon Technologies, P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™
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IXTK170P10P
IXYS, P-Channel 100V 170A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™
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SISH617DN-T1-GE3
Vishay Siliconix, P-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®
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CPH3356-TL-W
ON Semiconductor, P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount 3-CPH,
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CSD25483F4
Texas Instruments, P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
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STL30P3LLH6
STMicroelectronics, P-Channel 30V 30A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI
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