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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86300DC
ON Semiconductor, N-Channel 80V 24A (Ta), 76A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®
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SIHP21N80AE-GE3
Vishay Siliconix, N-Channel 800V 17.4A (Tc) 32W (Tc) Through Hole TO-220AB,
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BSC035N04LSGATMA1
Infineon Technologies, N-Channel 40V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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IXFX140N30P
IXYS, N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarP2™
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PHP27NQ11T,127
Nexperia USA Inc., N-Channel 110V 27.6A (Tc) 107W (Tc) Through Hole TO-220AB, TrenchMOS™
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DMN2075UDW-7
Diodes Incorporated, N-Channel 20V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363,
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IRF1405STRLPBF
Infineon Technologies, N-Channel 55V 131A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®
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STW37N60DM2AG
STMicroelectronics, N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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IRL530PBF
Vishay Siliconix, N-Channel 100V 15A (Tc) 88W (Tc) Through Hole TO-220AB,
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SIHH068N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 34A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
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RSJ450N04TL
Rohm Semiconductor, N-Channel 40V 45A (Ta) 50W (Tc) Surface Mount LPTS,
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FDS8842NZ
ON Semiconductor, N-Channel 40V 14.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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