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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI4116DY-T1-E3
Vishay Siliconix, N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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STL7N10F7
STMicroelectronics, N-Channel 100V 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), DeepGATE™, STripFET™ VII
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IPS70R2K0CEAKMA1
Infineon Technologies, N-Channel 700V 4A (Tc) 42W (Tc) Through Hole PG-TO251-3, CoolMOS™
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DMN6066SSS-13
Diodes Incorporated, N-Channel 60V 3.7A (Ta) 1.56W (Ta) Surface Mount 8-SO,
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NX7002BKMBYL
Nexperia USA Inc., N-Channel 60V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006B-3, TrenchMOS™
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SIHB21N60EF-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263AB (D²PAK),
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SIHP22N60E-E3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB,
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SQD100N04-3M6_GE3
Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,
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BSC110N06NS3GATMA1
Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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SIS888DN-T1-GE3
Vishay Siliconix, N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), ThunderFET®
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IRLML0030TRPBF
Infineon Technologies, N-Channel 30V 5.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
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FCD1300N80Z
ON Semiconductor, N-Channel 800V 4A (Tc) 52W (Tc) Surface Mount DPAK, SuperFET® II
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