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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86367
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 40V
FET Feature -
Power Dissipation (Max) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PMZB600UNEYL
Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,
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STW65N65DM2AG
STMicroelectronics, N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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IRFL4315TRPBF
Infineon Technologies, N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223, HEXFET®
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STW40NF20
STMicroelectronics, N-Channel 200V 40A (Tc) 160W (Tc) Through Hole TO-247-3, STripFET™
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STW58N65DM2AG
STMicroelectronics, N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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SI8824EDB-T2-E1
Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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TK14G65W,RQ
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV
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STD12N65M2
STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2
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FQP11N40C
ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Through Hole TO-220-3, QFET®
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IXTA150N15X4-7
IXYS, N-Channel 150V 150A (Tc) 480W (Tc) Surface Mount TO-263-7,
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SIR460DP-T1-GE3
Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFR7440TRPBF
Infineon Technologies, N-Channel 40V 90A (Tc) 140W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
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