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FDD86367

FDD86367

Part NumberFDD86367

ManufacturerON Semiconductor

DescriptionMOSFET N-CHANNEL 80V 100A TO252

DatasheetFDD86367

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252)

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FDD86367 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD86367
Standard Package	1
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101, PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4840pF @ 40V
FET Feature	-
Power Dissipation (Max)	227W (Tj)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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