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IRFP4668PBF

IRFP4668PBF

Part NumberIRFP4668PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 130A TO-247AC

DatasheetIRFP4668PBF

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC

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IRFP4668PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFP4668PBF
Standard Package	25
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	241nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	10720pF @ 50V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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