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IRFBE20PBF

IRFBE20PBF

Part NumberIRFBE20PBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 1.8A TO-220AB

DatasheetIRFBE20

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB

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IRFBE20PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFBE20
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
FET Feature	-
Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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