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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7575-100A, BUK7675-100A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 25V
FET Feature -
Power Dissipation (Max) 99W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®
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SI7858BDP-T1-GE3
Vishay Siliconix, N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FDP060AN08A0
ON Semiconductor, N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Through Hole TO-220-3, PowerTrench®
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SUD25N15-52-E3
Vishay Siliconix, N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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ON Semiconductor, N-Channel 250V 33A (Tc) 245W (Tc) Through Hole TO-3PN, UniFET™
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IXYS, N-Channel 75V 80A (Tc) 357W (Tc) Through Hole TO-220AB, Linear L2™
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BSC077N12NS3GATMA1
Infineon Technologies, N-Channel 120V 13.4A (Ta), 98A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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NTMFS5C442NLT1G
ON Semiconductor, N-Channel 40V 27A (Ta), 130A (Tc) 3.1W (Ta), 69W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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FDPF33N25TRDTU
ON Semiconductor, N-Channel 250V 37W (Tc) Through Hole TO-220F (LG-Formed),
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BUK7675-55A,118
Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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