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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFBC30AS,AL, SiHFBC30AS,AL
Standard Package 800
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 500V 8A (Tc) 380W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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SI4896DY-T1-E3
Vishay Siliconix, N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
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