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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF830AS,AL, SiHF830AS,AL
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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NTMFS4983NFT1G
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CPC3960ZTR
IXYS Integrated Circuits Division, N-Channel 600V 1.8W (Ta) Surface Mount SOT-223,
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HAT2266H-EL-E
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TPH5200FNH,L1Q
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SUD35N10-26P-E3
Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, TrenchFET®
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