IRF7473TRPBF
IRF7473TRPBF
Part Number IRF7473TRPBF
Description MOSFET N-CH 100V 6.9A 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
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IRF7473TRPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF7473PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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