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IRF640NLPBF

IRF640NLPBF

Part NumberIRF640NLPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 18A TO-262

DatasheetIRF640N(S,L)PbF

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262

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IRF640NLPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF640N(S,L)PbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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