Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2308BDS-T1-E3

SI2308BDS-T1-E3

SI2308BDS-T1-E3

Part NumberSI2308BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 2.3A SOT23-3

DatasheetSI2308BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2308BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308BDS-T1-E3.
We are offering SI2308BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2308BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2308BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.09W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2308BDS-T1-E3 - Related Products

	IXTH130N10T	IXYS, N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-247 (IXTH), TrenchMV™	View
	TSM036N03PQ56 RLG	Taiwan Semiconductor Corporation, N-Channel 30V 124A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	BSS7728NH6327XTSA2	Infineon Technologies, N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, SIPMOS®	View
	CPH6442-TL-W	ON Semiconductor, N-Channel 60V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH,	View
	AOB190A60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount TO-263 (D2Pak),	View
	IPD50N03S2L06ATMA1	Infineon Technologies, N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11, Automotive, AEC-Q101, OptiMOS™	View
	IXFQ22N60P3	IXYS, N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	TSM60NB099CF C0G	Taiwan Semiconductor Corporation, N-Channel 600V 38A (Tc) 69W (Tc) Through Hole ITO-220S,	View
	IRF3710PBF	Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRFB4310PBF	Infineon Technologies, N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	ZXMN2B03E6TA	Diodes Incorporated, N-Channel 20V 4.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View
	STV300NH02L	STMicroelectronics, N-Channel 24V 200A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III	View

SI2308BDS-T1-E3 - Tags

SI2308BDS-T1-E3 SI2308BDS-T1-E3 PDF SI2308BDS-T1-E3 datasheet SI2308BDS-T1-E3 specification SI2308BDS-T1-E3 image SI2308BDS-T1-E3 India Renesas Electronics India SI2308BDS-T1-E3 buy SI2308BDS-T1-E3 SI2308BDS-T1-E3 price SI2308BDS-T1-E3 distributor SI2308BDS-T1-E3 supplier SI2308BDS-T1-E3 wholesales