IRF630NPBF
IRF630NPBF
Part Number IRF630NPBF
Description MOSFET N-CH 200V 9.3A TO-220AB
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
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IRF630NPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF630N
Standard Package 1000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
FET Feature -
Power Dissipation (Max) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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