STH315N10F7-2
STH315N10F7-2
Part Number STH315N10F7-2 Description MOSFET N-CH 100V 180A H2PAK-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
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STH315N10F7-2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH315N10F7-2,STH315N10F7-6 Standard Package 1 Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2Pak-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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