Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPW65R095C7
Standard Package	240
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id	4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2140pF @ 400V
FET Feature	-
Power Dissipation (Max)	128W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247
Package / Case	TO-247-3

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IXTP160N10T	IXYS, N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220AB, TrenchMV™	View
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IXFX98N50P3	IXYS, N-Channel 500V 98A (Tc) 1300W (Tc) Through Hole PLUS247™-3, HiPerFET™, Polar3™	View
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IPW65R095C7XKSA1

Part NumberIPW65R095C7XKSA1