IPW65R037C6FKSA1
IPW65R037C6FKSA1
Part Number IPW65R037C6FKSA1
Description MOSFET N-CH 650V 83.2A TO247-3
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 83.2A (Tc) 500W (Tc) Through Hole PG-TO247-3
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IPW65R037C6FKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPW65R037C6
Standard Package 30
Manufacturer Infineon Technologies
Series CoolMOS™ C6
Packaging Tube
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 100V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
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