Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VN2210 Datasheet
Standard Package	500
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	350mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.4V @ 10mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 25V
FET Feature	-
Power Dissipation (Max)	360mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-39
Package / Case	TO-205AD, TO-39-3 Metal Can

TSM085N03PQ33 RGG	Taiwan Semiconductor Corporation, N-Channel 30V 52A (Tc) 37W (Tc) Surface Mount 8-PDFN (3x3),	View
BUK7M12-60EX	Nexperia USA Inc., N-Channel 60V 53A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
FDBL0330N80	ON Semiconductor, N-Channel 80V 220A (Tc) 300W (Tc) Surface Mount 8-HPSOF, PowerTrench®	View
FQA11N90C-F109	ON Semiconductor, N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P, QFET®	View
R5021ANX	Rohm Semiconductor, N-Channel 500V 21A (Tc) 50W (Tc) Through Hole TO-220FM,	View
FDB2710	ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®	View
PMZB600UNEYL	Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
SQM60N06-15_GE3	Vishay Siliconix, N-Channel 60V 56A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
STF6N65K3	STMicroelectronics, N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™	View
IXTY08N100D2	IXYS, N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak),	View
IXFR44N50Q3	IXYS, N-Channel 500V 25A (Tc) 300W (Tc) Through Hole ISOPLUS247™, HiPerFET™	View
SI4114DY-T1-GE3	Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View

VN2210N2

Part NumberVN2210N2