FQD2N100TM
FQD2N100TM
Part Number FQD2N100TM Description MOSFET N-CH 1000V 1.6A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak
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FQD2N100TM - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD2N100, FQU2N100 Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9Ohm @ 800mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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