IPT111N20NFDATMA1
IPT111N20NFDATMA1
Part Number IPT111N20NFDATMA1 Description MOSFET N-CH 200V 96A HSOF-8 Package / Case 8-PowerSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
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IPT111N20NFDATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPT111N20NFD Standard Package 2000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V Vgs(th) (Max) @ Id 4V @ 267µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 100V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN
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