IPT111N20NFDATMA1


IPT111N20NFDATMA1

Part NumberIPT111N20NFDATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPT111N20NFDATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2000
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000pF @ 100V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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