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IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

Part NumberIPS65R1K4C6AKMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 3.2A TO-251

DatasheetIPS65R1K4C6

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3

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IPS65R1K4C6AKMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPS65R1K4C6
Standard Package	1500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 100V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Stub Leads, IPak

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