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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP310N10F7
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
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BUK9609-75A,118
Nexperia USA Inc., N-Channel 75V 75A (Tc) 230W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FDB2710
ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®
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TSM9N90ECZ C0G
Taiwan Semiconductor Corporation, N-Channel 900V 9A (Tc) 89W (Tc) Through Hole TO-220,
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FCH47N60N
ON Semiconductor, N-Channel 600V 47A (Tc) 368W (Tc) Through Hole TO-247-3, SupreMOS™
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NDT3055L
ON Semiconductor, N-Channel 60V 4A (Ta) 3W (Ta) Surface Mount SOT-223-4,
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SQD100N03-3M2L_GE3
Vishay Siliconix, N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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IRF7821TRPBF
Infineon Technologies, N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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IRL630STRLPBF
Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,
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ZXMN10A07ZTA
Diodes Incorporated, N-Channel 100V 1A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,
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DMN6040SFDE-7
Diodes Incorporated, N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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IRFR48ZTRLPBF
Infineon Technologies, N-Channel 55V 42A (Tc) 91W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
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