IPP65R125C7XKSA1
IPP65R125C7XKSA1
Part Number IPP65R125C7XKSA1 Description MOSFET N-CH 650V 18A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3
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IPP65R125C7XKSA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPP65R125C7 Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ C7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V FET Feature - Power Dissipation (Max) 101W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3
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