Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP60R099C6XKSA1

IPP60R099C6XKSA1

IPP60R099C6XKSA1

Part NumberIPP60R099C6XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 37.9A TO220

DatasheetIPx60R099C6

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 37.9A (Tc) 278W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP60R099C6XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP60R099C6XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP60R099C6XKSA1.
We are offering IPP60R099C6XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP60R099C6XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx60R099C6
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	119nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2660pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP60R099C6XKSA1 - Related Products

	SQ2310ES-T1_GE3	Vishay Siliconix, N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236, TrenchFET®	View
	BSS123WQ-7-F	Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	TK100S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	STH140N6F7-2	STMicroelectronics, N-Channel 60V 80A (Tc) 158W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII	View
	ZVNL120A	Diodes Incorporated, N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	SIR440DP-T1-GE3	Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STB8N65M5	STMicroelectronics, N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	IRF5801TRPBF	Infineon Technologies, N-Channel 200V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	IRF710STRLPBF	Vishay Siliconix, N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D2PAK,	View
	PMN55ENEX	Nexperia USA Inc., N-Channel 60V 4.5A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP, TrenchMOS™	View
	SSM6K341NU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	BSZ050N03MSGATMA1	Infineon Technologies, N-Channel 30V 15A (Ta), 40A (Tc) 2.1W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View

IPP60R099C6XKSA1 - Tags

IPP60R099C6XKSA1 IPP60R099C6XKSA1 PDF IPP60R099C6XKSA1 datasheet IPP60R099C6XKSA1 specification IPP60R099C6XKSA1 image IPP60R099C6XKSA1 India Renesas Electronics India IPP60R099C6XKSA1 buy IPP60R099C6XKSA1 IPP60R099C6XKSA1 price IPP60R099C6XKSA1 distributor IPP60R099C6XKSA1 supplier IPP60R099C6XKSA1 wholesales