IPP041N12N3GXKSA1
IPP041N12N3GXKSA1
Part Number IPP041N12N3GXKSA1 Description MOSFET N-CH 120V 120A TO220-3 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
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IPP041N12N3GXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx041N12N3 G, IPB038N12N3 G Standard Package 500 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3
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IPP041N12N3GXKSA1 - Tags
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