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IPP041N12N3GXKSA1

IPP041N12N3GXKSA1

Part NumberIPP041N12N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 120V 120A TO220-3

DatasheetIPx041N12N3 G, IPB038N12N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3

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IPP041N12N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx041N12N3 G, IPB038N12N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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IPP041N12N3GXKSA1 - Tags

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