IPAW60R180P7SXKSA1
IPAW60R180P7SXKSA1
Part Number IPAW60R180P7SXKSA1 Description MOSFET N-CHANNEL 650V 18A TO220 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack
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IPAW60R180P7SXKSA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPAW60R180P7S Standard Package 450 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V FET Feature - Power Dissipation (Max) 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack
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