IPN50R1K4CEATMA1
IPN50R1K4CEATMA1
Part Number IPN50R1K4CEATMA1 Description CONSUMER Package / Case SOT-223-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 4.8A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN50R1K4CEATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN50R1K4CE Standard Package 3000 Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V Vgs(th) (Max) @ Id 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case SOT-223-3
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