IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1
Part Number IPG20N10S4L35ATMA1 Description MOSFET 2N-CH 8TDSON Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount PG-TDSON-8-4
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IPG20N10S4L35ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet IPG20N10S4L-35 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.1V @ 16µA Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V Power - Max 43W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4
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