IPDD60R125G7XTMA1
IPDD60R125G7XTMA1
Part Number IPDD60R125G7XTMA1
Description MOSFET NCH 650V 54A PG-HDSOP-10
Package / Case 10-PowerSOP Module
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1
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IPDD60R125G7XTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPDD60R125G7
Standard Package 1700
Manufacturer Infineon Technologies
Series CoolMOS™ G7
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 400V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module
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