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DMT10H010LPS-13

DMT10H010LPS-13

Part NumberDMT10H010LPS-13

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 100V 9.4A

DatasheetDMT10H010LPS

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 9.4A (Ta), 98A (Tc) 1.2W (Ta), 139W (Tc) Surface Mount PowerDI5060-8

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DMT10H010LPS-13 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMT10H010LPS
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 50V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta), 139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI5060-8
Package / Case	8-PowerTDFN

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DMT10H010LPS-13 - Tags

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