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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4-03
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs 66.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SQP60N06-15_GE3
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STB23NM50N
STMicroelectronics, N-Channel 500V 17A (Tc) 125W (Tc) Surface Mount D2PAK, MDmesh™ II
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IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Surface Mount TO-263, HiPerFET™
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SQJ872EP-T1_GE3
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PMZB600UNELYL
Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3, TrenchMOS™
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FDG327NZ
ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
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