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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4-03
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs 66.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IXFY26N30X3
IXYS, N-Channel 300V 26A (Tc) 170W (Tc) Surface Mount TO-252AA, HiPerFET™
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IPD60R3K3C6ATMA1
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CPH6443-TL-W
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FDMS7658AS
ON Semiconductor, N-Channel 30V 29A (Ta), 70A (Tc) 2.5W (Ta), 89W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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TPH8R80ANH,L1Q
Toshiba Semiconductor and Storage, N-Channel 100V 32A (Tc) 1.6W (Ta), 61W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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FDP80N06
ON Semiconductor, N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3, UniFET™
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PMZB200UNEYL
Nexperia USA Inc., N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3,
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IPC100N04S51R7ATMA1
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IRLML6246TRPBF
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BUK9620-100B,118
Nexperia USA Inc., N-Channel 100V 63A (Tc) 203W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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ZXMN6A08E6TA
Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,
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BUK9222-55A,118
Nexperia USA Inc., N-Channel 55V 48A (Tc) 103W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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