AOT1N60
AOT1N60
Part Number AOT1N60
Description MOSFET N-CH 600V 1.3A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 1.3A (Tc) 41.7W (Tc) Through Hole TO-220
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AOT1N60 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOT1N60
Standard Package 1000
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
FET Feature -
Power Dissipation (Max) 41.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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