IPD80R1K4P7ATMA1

Part NumberIPD80R1K4P7ATMA1

To learn about the specification of IPD80R1K4P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R1K4P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R1K4P7ATMA1.
We are offering IPD80R1K4P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R1K4P7
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 500V
FET Feature	Super Junction
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

PH2925U,115	Nexperia USA Inc., N-Channel 25V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
DMT3006LDK-7	Diodes Incorporated, N-Channel 30V 17.1A (Ta), 46.2A (Tc) 1.1W (Ta) Surface Mount V-DFN3030-8,	View
FCP380N60	ON Semiconductor, N-Channel 600V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3, SuperFET® II	View
IPB100N12S305ATMA1	Infineon Technologies, N-Channel 120V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™	View
DN3145N8-G	Microchip Technology, N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89),	View
SI4490DY-T1-E3	Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®	View
SIDR668DP-T1-GE3	Vishay Siliconix, N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
FQN1N50CTA	ON Semiconductor, N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3, QFET®	View
TK8Q65W,S1Q	Toshiba Semiconductor and Storage, N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK, DTMOSIV	View
STP10NM60ND	STMicroelectronics, N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220, FDmesh™ II	View
IXFX94N50P2	IXYS, N-Channel 500V 94A (Tc) 1300W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarHV™	View
SIE822DF-T1-GE3	Vishay Siliconix, N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S), TrenchFET®	View